yl23455永利

CN EN
Home
About Us
Newpros
650V Super Junction N-Channel MOSFET
650V Super Junction N-Channel MOSFET Back
 PDF

Introduction 1. The 650V series superjunction products designed by the special multi-layer epitepity process of Yangjie Technology can meet the application requirements of low conduction loss, low switching loss, EMI compatibility and different circuit topologies. The products have good performance of internal conduction resistance (Rdson) and gate charge (Qg), reduce conduction loss and switching loss. Lower switching noise and lower Trr improve system stability and performance.
2. Switch speed and EMI balance, lower Trr characteristics, suitable for charger, power adapter, TV power supply, industrial power supply and other fields, can also meet some half-bridge or various bridge circuit topology application requirements.
Features 1. Adopt the special multi-layer epitaxial process design of Yangjie Technology, with higher process stability and reliability, switching speed and EMI balance, lower Trr characteristics;
2. The series of products have the characteristics of low on-resistance, low gate charge, low on-loss and low switching loss;
3. To-252 /ITO-220AB package, with better calorific value characteristics.
SPECIFICATION
Related new products

IGBT 50A 1200V Discrete for Industrial Control

New SiC MOSFET for Photovoltaic Energy Storage, OBC&Power Supply

TOLL N100V MOSFETs for Industrial

SOD-123FL package power ESD

N40V SGT MOSFET for Automotive Motor Drives

GBU Package Extended 35A-50A High Current Series Products

SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies

P 40V Trench MOSFET for Load Switch Application

New N150V SGT MOSFETs

New plug-in rectifier bridge -JC that follows the trend of flattening
网站地图