yl23455永利

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
PDF

Introduction 1、TO-247package 50A 650V IGBT discrete;
2、The voltage level is 650V, the current level is 50A@Tc=100℃;
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications;
4、Low conduction loss, low switching loss, high reliability;
5、Use environmentally friendly materials and meet RoHS standards;
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ;
3、High voltage 650V;
4、Low conduction loss, low switching loss, meet the high frequency application conditions;
5、The latest generation of micro trench design, a cost-effective product;
SPECIFICATION

DGW50N65CTL0

Related new products

Constant VC ESD Product

1200V 40mΩ SiC MOSFET

N150V MOSFET for Industrial Control

SGT MOSFET for PV Microinverter

LFPAK56D MOSFET for Automotive

Micro-pattern Trenches IGBT for Servo Controller & Frequency Converter & Industrial Power Supply

New N150V SGT MOSFETs

N40V SGT MOSFET for Automotive Motor Drives

DFN2510 & DF0603 Package ESD Protection Series

IGBT 50A 1200V Discrete for Industrial Control
网站地图