yl23455永利

CN EN
Home
About Us
Newpros
New N150V SGT MOSFETs
New N150V SGT MOSFETs Back
 PDF

Introduction Power over Ethernet Protocol (PoE) has been available for many years. A new standard IEEE 802.3bt was approved in 2018, which increases the maximum power that can be transmitted through twisted-pair Ethernet cables and encourages new PoE applications to pursue higher power density.Current power supply equipment (PSE) provides up to 100W of power and supports 8 different power levels;Power Device (PD) will be able to use up to 71W of power.Yangjie launched N150V serialized products for IEEE802.3af&at&bt.Using SGT technology, it has higher switching speeds and lower losses than traditional Trench MOS products.
Features 1、Using SGT technology, the product has low internal resistance and excellent switching characteristics
2、PDFN5060, SO-8, TO252, ITO220AB multiple packages are optional
3、Applicable to IEEE802.3af&at&bt protocol PD power supply
SPECIFICATION

YJD18G15A YJG15G15A YJG60G15HJ YJS05G15A

Related new products

IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application

SOD-323HE Diode for Automotive 、Home Appliances, Etc

SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies

IGBT for servo controllers and frequency converter, with high current rectification and braking capability

High-side+Low-side PDFN5060 N30V Mosfet for PC Mainboard

50uA SOD-523 Package Small Signal Zener Diode

ESDM Series ESD Protection Diodes with Ultra-low Junction Capacitance Value of 0.05 pF

P60V MOSFET for Automotive Electronics

SOD-123HE Diode

N60V SGT MOSFET
网站地图